scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

50 KVA High Temperature Bi-directional Converter for On-Engine Application in More Electric Aircraft

2014 ◽  
Author(s):  
Shweta Sanjeev ◽  
Goutham Selvaraj ◽  
Patrick Franks ◽  
Kaushik Rajashekara
Keyword(s):  
High Temperature ◽  
Electric Aircraft ◽  
More Electric Aircraft

scholarly journals Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

2014 ◽  
Vol 35 (12) ◽  
pp. 1206-1208 ◽  
Author(s):  
Reza Ghandi ◽  
Cheng-Po Chen ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Wide Temperature Range ◽  
Stable Operation ◽  
Temperature Range

Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles

2012 ◽  
Vol 2012 (1) ◽  
pp. 001105-001115 ◽  
Author(s):  
Z. Cole ◽  
B. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Density ◽  
Hybrid Electric Vehicle ◽  
Peak Power ◽  
Mechanical Design ◽  
Next Generation ◽  
Power Module ◽  
Modeling And Analysis ◽  
Hybrid Electric

The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power module (MCPM) packaging strategy. The Silicon Carbide (SiC) MCPM charger is capable of operating to temperatures in excess of 200°C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present actively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50 kHz switching, and measures greater than 6.3 liters with a mass of 6.6 kg, resulting in a power density of 150 W/kg. The passively cooled SiC MCPM charger presented herein was designed to deliver a peak power of 5 kW at greater than 96% efficiency, while measuring less than 0.9 liters with a mass of 1 kg, resulting in a power density greater than 5 kW/kg. Thus, the novel SiC MCPM charger represents an increase in power density of more than 30×, a very significant power density achievement in size and weight for sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite-element modeling and analysis of thermal and stress considerations, characterization and parasitic analysis of the MCPM, and the development of high temperature solutions for SiC devices.

Study of the electrical and thermal properties of a silicone elastomer filled with silica for high temperature power device encapsulation

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 1-9 ◽  
Author(s):  
E. Sili ◽  
M.L. Locatelli ◽  
M. Bechara ◽  
S. Diaham ◽  
S. Dinculescu
Keyword(s):  
High Temperature ◽  
Temperature Limit ◽  
Silicone Elastomer ◽  
Power Device ◽  
Maximum Temperature ◽  
Power Devices ◽  
Power Module ◽  
Temperature Range ◽  
Dimethyl Siloxane ◽  
Silicone Gels

In order to take the full advantage of the high-temperature SiC and GaN operating power devices, package materials able to withstand high-temperature storage and large thermal cycles are required. However, a survey of the commercially available silicone gels mostly used for power module encapsulation, highlights that this type of materials exhibits a maximum temperature limit for continuous operation of about 260 °C. A slight extension of this temperature range might be obtained by using silicone elastomers with hardness still remaining measurable on the Shore A scale. The aim of this paper is to study a silicone elastomer poly(dimethyl)siloxane (PDMS) with silica fillers, with a specified maximum operating temperature of 275 °C, in order to evaluate its ability for high temperature power device encapsulation. First, the nature and size of the filler microparticles were determined using scanning electron microscopy (SEM) observations coupled with energy dispersive X-ray spectroscopy (EDX) analysis. Second, the results of the thermal and electrical properties of this elastomer over a wide temperature range show that this type of insulating materials presents promising initial properties for the encapsulation of high temperature power devices.

Sign in / Sign up

Export Citation Format

Share Document