Refractory-Metal-Silicide Contact Formation by Rapid Thermal Annealing

1985 ◽  
Author(s):  
Nobuyoshi NATSUAKI ◽  
Kiyonori OHYU ◽  
Tadashi SUZUKI ◽  
Nobuyoshi KOBAYASHI ◽  
Naotaka HASHIMOTO ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Refractory Metal ◽  
Metal Silicide ◽  
Contact Formation

Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

1985 ◽  
Vol 47 (7) ◽  
pp. 688-691 ◽  
Author(s):  
D. L. Kwong ◽  
D. C. Meyers ◽  
N. S. Alvi ◽  
L. W. Li ◽  
E. Norbeck
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Refractory Metal ◽  
Ion Beam ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Ion Beam Mixing

Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation

2002 ◽  
Vol 389-393 ◽  
pp. 901-904 ◽  
Author(s):  
Oleg A. Agueev ◽  
Alexander M. Svetlichnyi ◽  
Roman N. Razgonov
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Contact Formation

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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