Enhanced absorption in the space charge region of GaAs solar cells

The photo-generated currents of GaAs solar cells with different lengths of space charge region are obtained and analyzed in this study. The enhanced absorption coefficient in the space charge region is adopted to calculate the photo-generated current based on the solar cell physics theory. The calculated currents coincide well with the experimental currents both under single wavelength incidence and solar spectrum irradiation conditions.

Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions

The effect of low-energy proton irradiation on the pulse characteristics of silicon n+-p-p+ structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015 cm−2 creates a region with an effective lifetime of 5.5·10−8 s in the space charge region of the n+-p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

Modelling of voltage changes in the n-p junction in the pulse mode

The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n+-p-p+ structure correspond to the experimental data.

Замена туннельных переходов в InP на каналы проводимости с кристаллитами GaP

The results of investigations by the method of Electron beam-induced current of p-n junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra.

The synergistic role with photosensitivity effect and extended space charge region on inorganic-organic WO3/PANI photoanode for efficient PEC water splitting

The predicaments of poor carrier separation and light absorption need be overcome in order to maximize the preeminent performances of WO3 in photoelectrochemical (PEC) water splitting. Hence, we firstly prepared...

Advanced architecture ofCdHgTe photodiode for detection of weak infrared radiation

The dark currents of CdHgTe photodiodes based on the advanced architecture, which isused inthreshold FPAfordetection ofweak infrared radiation,have been analyzed. Theopposite conductivity regions areformedof in wide-gap layers, thatreducesthe contribution of theSRHgeneration-recombination currents of to the total dark current.By using various compositions layers with transition sublayers reducing surface recombination at the interfaces, one canre-duce the surface mechanismcontributionto the total dark current of the photodiode. Finally, due to the correct choice of the absorption layer composition and wide-gap layer parameters, dark current in the space charge region ismuch lower than аdiffusion currentcausing by Auger mechanismin the absorption region for a given cutoff wavelength.