depletion layer width
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Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

2020 ◽  
Vol 22 (23) ◽  
pp. 13277-13284
Author(s):  
Wanchao Zheng ◽  
Yuchen Wang ◽  
Chao Jin ◽  
Ruihua Yin ◽  
Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Depletion Layer ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Layer Width ◽  
Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

2018 ◽  
Vol 51 (20) ◽  
pp. 205303 ◽  
Author(s):  
Yu Bai ◽  
Zhan Jie Wang ◽  
Jian Zhong Cui ◽  
Zhi Dong Zhang
Keyword(s):  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width

Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

2016 ◽  
Vol 34 (2) ◽  
pp. 02L110 ◽  
Author(s):  
Irving Eduardo Cortes-Mestizo ◽  
Leticia Ithsmel Espinosa-Vega ◽  
Jose Angel Espinoza-Figueroa ◽  
Alejandro Cisneros-de-la-Rosa ◽  
Eric Eugenio-Lopez ◽  
...  
Keyword(s):  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width

Evaluation of depletion layer width and gas-sensing properties of antimony-doped tin oxide thin film sensors

2015 ◽  
Vol 220 ◽  
pp. 1354-1360 ◽  
Author(s):  
Jianqiao Liu ◽  
Xuesong Liu ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Qiuxuan Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Depletion Layer ◽  
Oxide Thin Film ◽  
Layer Width ◽  
Sensing Properties ◽  
Depletion Layer Width ◽  
Thin Film Sensors ◽  
Gas Sensing Properties

Evaluation of Depletion Layer Width in Antimony-Doped Tin Oxide Thin Films for Gas Sensors

2015 ◽  
Vol 644 ◽  
pp. 125-128 ◽  
Author(s):  
Jian Qiao Liu ◽  
Zhao Xia Zhai ◽  
Guo Hua Jin ◽  
Xue Song Liu ◽  
Lin Quan
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Tin Oxide ◽  
Influencing Factor ◽  
Sol Gel ◽  
Depletion Layer ◽  
Oxide Thin Films ◽  
Doping Amount ◽  
Layer Width ◽  
Depletion Layer Width

The sensing properties of semiconductive gas sensors originate from the resistance variation of depletion layer in each grain of the element. One of the most fundamental factors in this type of sensors is the width of depletion region. In this work, the antimony-doped tin oxide thin films for gas sensors are prepared via sol-gel routes on alumina substrates. The influence of antimony addition amount on electrical resistance of thin films is concluded. The relationship is plotted in the coordinates of logarithmic resistance against doping amount. On the basis of Schottky barrier model, a novel method is proposed to evaluate the width of depletion layer of semiconductive gas sensors by using the first order derivative of logarithmic resistance with respect to doping amount. Thus, the depletion layer width of the prepared antimony-doped thin film is calculated and its influencing factor is also discussed.

Numeral description of grain size effects of tin oxide gas-sensitive elements and evaluation of depletion layer width

2015 ◽  
Vol 11 (3) ◽  
pp. 457-465 ◽  
Author(s):  
Jianqiao Liu ◽  
Guohua Jin ◽  
Zhaoxia Zhai ◽  
Faheema Fairuj Monica ◽  
Xuesong Liu
Keyword(s):  
Grain Size ◽  
Tin Oxide ◽  
Size Effects ◽  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width ◽  
Grain Size Effects

Control of depletion layer width via amount of AuNPs for sensor response enhancement in ZnO nanostructure sensor

2012 ◽  
Vol 171-172 ◽  
pp. 230-237 ◽  
Author(s):  
Ekasiddh Wongrat ◽  
Niyom Hongsith ◽  
Duangmanee Wongratanaphisan ◽  
Atcharawon Gardchareon ◽  
Supab Choopun
Keyword(s):  
Sensor Response ◽  
Depletion Layer ◽  
Layer Width ◽  
Zno Nanostructure ◽  
Depletion Layer Width ◽  
Response Enhancement
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