Preparation of a ZnO Nanostructure as the Anode Material Using RF Magnetron Sputtering System

In this study, a four-inch zinc oxide (ZnO) nanostructure was synthesized using radio frequency (RF) magnetron sputtering to maximize the electrochemical performance of the anode material of a lithium-ion battery. All materials were grown on cleaned p-type silicon (100) wafers with a deposited copper layer inserted at the stage. The chamber of the RF magnetron sputtering system was injected with argon and oxygen gas for the growth of the ZnO films. A hydrogen (H2) reduction process was performed in a plasma enhanced chemical vapor deposition (PECVD) chamber to synthesize the ZnO nanostructure (ZnO NS) through modification of the surface structure of a ZnO film. Field emission scanning electron microscopy and atomic force microscopy were performed to confirm the surface and structural properties of the synthesized ZnO NS, and cyclic voltammetry was used to examine the electrochemical characteristics of the ZnO NS. Based on the Hall measurement, the ZnO NS subjected to H2 reduction had a higher electron mobility and lower resistivity than the ZnO film. The ZnO NS that was subjected to H2 reduction for 5 min and 10 min had average roughness of 3.117 nm and 3.418 nm, respectively.

AZO-Based ZnO Nanosheet MEMS Sensor with Different Al Concentrations for Enhanced H2S Gas Sensing

The properties of H2S gas sensing were investigated using a ZnO nanostructure prepared with AZO (zinc oxide with aluminium) and Al surfaces which were developed on a MEMS (Micro Electromechanical System) device. Hydrothermal synthesis was implemented for the deposition of the ZnO nanostructure. To find the optimal conditions for H2S gas sensing, different ZnO growth times and different temperatures were considered and tested, and the results were analysed. At 250 °C and 90 min growth time, a ZnO sensor prepared with AZO and 40 nm Al recorded an 8.5% H2S gas-sensing response at a 200 ppb gas concentration and a 14% sensing response at a gas concentration of 1000 ppb. The dominant sensing response provided the optimal conditions for the ZnO sensor, which were 250 °C temperature and 90 min growth time. Gas sensor selectivity was tested with five different gases (CO, SO2, NO2, NH3 and H2S) and the sensor showed great selectivity towards H2S gas.

MORPHOLOGICAL AND PHYSICAL PROPERTIES OF ZnO NANOSTRUCTURES GROWN ON Sb-DOPED ZnO SEEDING FILMS ANNEALED UNDER DIFFERENT ATMOSPHERES

In this work, morphological and physical properties of pyramid-like ZnO nanostructures fabricated on Sb-doped ZnO seeding films annealed under different atmospheres are extensively studied. The Sb-doped ZnO seeding films were first prepared by sol–gel spin coating technique onto glass substrate then annealed in nitrogen, air and argon followed by low-temperature hydrothermal process for ZnO nanostructures fabrication. The morphological results exhibit the growth of pyramid-like ZnO nanostructure with increasing density of the ZnO nanostructures. The crystal structure shows pyramid-like ZnO wurtzite hexagonal growth along the c-axis without any impurity phase. The growth of pyramid-like ZnO nanostructures is due to the high growth rate of (002) plane. Photoluminescence spectra exhibit the near-band-edge of all samples while the red emission appears in ZnO nanostructures after the hydrothermal process due to the imperfection in the crystal. The reflectance of ZnO nanostructures covers the visible region with the absorption edge of 375[Formula: see text]nm. The calculation shows the relevant energy band gaps in the range of 3.26–3.28[Formula: see text]eV. The difference in hydrothermally grown ZnO nanostructures is significantly affected by different annealing atmospheres.