Integrated Semi-Supervised Clustering Method and Its Application in Rock-Typing in AA Reservoir

Rock-typing is complicated and critical for numerical simulation. Therefore, some researchers proposed several clustering methods to make classification automatic and convenient. However, traditional methods only focus in specific area such as lithofacies or petrophysical data instead of integrated clustering. Besides, all the clustering method are related to classification interval determined subjectively. Therefore, a new clustering method for rock-typing integrated different disciplines is critical for modelling and reservoir simulation. In this paper, we proposed a novel semi-supervised clustering method integrated with data from different disciplines, which can divide rock type automatically and precisely. Considering AA reservoir is a porous carbonate reservoir with seldom fracture and vug, FZI (Flow Zone Indicator) and RQI (Reservoir Quality Index) is utilized as the corner stone of the clustering method after collection and plotting for porosity and permeability data for cores from AA reservoir. Then lithofacies, sedimentary facies and petrophysical data are applied as constraints to improve FZI method. Hamming distance and earth mover distance are imported to build integrated function for clustering method. Finally, based on output results of integrated clustering method from experimental data, grid properties of model in Petrel software are imported as the input parameter for further procession. Therefore, saturation region for numerical simulation built by rock-typing is constructed. The results show that new method could make classification accurately and easily. History matching results for watercut indicate that new saturation regions improve the numerical simulation performance.

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.

Torque Vectoring Control of RWID Electric Vehicle for Reducing Driving-Wheel Slippage Energy Dissipation in Cornering

The anxiety of driving range and inconvenience of battery recharging has placed high requirements on the energy efficiency of electric vehicles. To reduce driving-wheel slip energy consumption while cornering, a torque vectoring control strategy for a rear-wheel independent-drive (RWID) electric vehicle is proposed. First, the longitudinal linear stiffness of each driving wheel is estimated by using the approach of recursive least squares. Then, an initial differential torque is calculated for reducing their overall tire slippage energy dissipation. However, before the differential torque is applied to the two side of driving wheels, an acceleration slip regulation (ASR) is introduced into the overall control strategy to avoid entering into the tire adhesion saturation region resulting in excessive slip. Finally, the simulations of typical manoeuvring conditions are performed to verify the veracity of the estimated tire longitudinal linear stiffness and effectiveness of the torque vectoring control strategy. As a result, the proposed torque vectoring control leads to the largest reduction of around 17% slip power consumption for the situations carried out above.

Design of Squirrel-Cage Self-Excited 3-phase Induction Generator

Due to the wide utilization of a 3-phase, squirrel-cage, self-excitation generator in renewable energy and isolated areas application, the paper deals with detailed design procedure of this type of generator, in a sequence and systematic manner. The design steps are obtained and executed in a Matlab file of the computer program to suit the newly designed constructions and parameters of the generator. In the new construction, the generator can be operated in a stable and saturation region. Due to the similarity in the construction of induction motor and generator, the formulas used in the calculation of equivalent circuit components of an induction motor may be utilized to calculate the parameters of the induction generator. To obtain optimized induction generator parameters and construction dimensions an ant colony algorithm is used to optimize these construction dimensions and generator parameters. The main objective parameters used in this algorithm are the generator efficiency, the excitation-capacitance, winding temperature rise, and minimum generator size is for 5 HP, 400 V, 50 Hz, and star connection generator.

PAPR Reduction an effective approach for next frontier MIMO-OFDM systems

The ‘Orthogonal frequency division multiplexing (OFDM)’ is a well-accepted and effective technology employed today and in future wireless communication systems. The combinations of OFDM and ‘multiple-input multiple-output (MIMO’) offer high quality of services and better throughput. The multicarrier OFDM system experiences a high ‘peak-to-average power ratio (PAPR’), which is the major issue in the OFDM scheme and must be truncated to achieve trustworthy communication. Due to high PAPR in a signal to be transmitted, the power amplifier in the transmitter section enters into saturation region and amplifies the signal nonlinearly, resulting in loss of orthogonality and ultimately in ‘inter-carrier interference (ICI)’. In this article, the 'iterative clipping and filtering (ICF)' method is proposed to minimize the PAPR in the OFDM system. The simulation is carried out using MATLAB (version 2014b). The result of the proposed ICF method and the ‘selective mapping (SLM)’ scheme is analyzed and compared. From the analysis, it is shown that the proposed ICF technique is more suitable for minimizing the PAPR effectively without affecting ‘bit error rates (BER)’ much and the simplicity of the system. The simulation result of the proposed ICF scheme using ‘Quadrature Phase Shift Keying (QPSK)’, FFT size of 128, and clipping and filtering level up to 6 shows that the proposed ICF scheme for clipping level of 6 reduces PAPR to 5dB. Also, the BER is minimized at the level of 3×10−5 at 12 dB SNR.

Dynamics and its Effects on Saturation Region in Semiconductor Optical Amplifiers

We focus on studying the dynamics of bulk semiconductor optical amplifiers and their effects on the saturation region for short pulse that differ, however there is the same unsaturated gain for both dynamics. Parameters like current injection, fast dynamics present by carrier heating (CH), and spectra hole burning (SHB) are studied for regions that occur a response to certain dynamics. The behavior of the saturation region is found to be responsible for phenomena such as recovery time and chirp for the pulse under study.

Hierarchical Model Predictive Control for Autonomous Collision Avoidance of Distributed Electric Drive Vehicle with Lateral Stability Analysis in Extreme Scenarios

This paper proposes an active collision avoidance controller based on a hierarchical model predictive control framework for distributed electric drive vehicles (4IDEV) considering extreme conditions. In this framework, a two-layer strategy is developed. The upper layer is the path replanning controller based on nonlinear MPC (nMPC), from which a collision-free path including the optimal lateral displacement and yaw angle can be obtained in real-time while encountering the obstacles. The lower layer is the path tracking controller based on hybrid MPC (hMPC), and the coordinated control inputs (yaw moment and the front wheel steering angle) are solved by a Mixed-Integer Quadratic Programming (MIQP) with the piecewise affine (PWA) tire model considering tire saturation region. Moreover, to improve the lateral stability when tracking, the stable zone of lateral stability in the high-risk condition is analyzed based on the phase portrait method, by which the constraints of vehicle states and inputs are derived. The verification is carried out on the MATLAB and CarSim co-simulation platform, and the simulation results show that the proposed active collision avoidance controller can track the reference path accurately and prevent vehicle instability in extreme scenarios.

Back-channel Etched In-Ga-Zn-O Thin-film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compare the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibits good electrical properties as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 x 10-6 A. We patterned all the layers by photolithography process. Finally, we introduced SiO2-ESL layer to protect the device from the external influence. The results show that the prevention of Cu and introduced ESL layer enhances the electrical properties of IGZO TFTs.