nonstoichiometric oxides
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2021 ◽  
Vol 119 (26) ◽  
pp. 263902
Author(s):  
Gianpaolo Lenarduzzi ◽  
Thomas A. Cooper

2021 ◽  
Vol 368 ◽  
pp. 137628
Author(s):  
Hongwei Li ◽  
Shaofei Zhang ◽  
Hao Liu ◽  
Zhijun Qiao ◽  
Zhenyang Yu ◽  
...  

Author(s):  
V.S. Vaschilin ◽  
Egor Krivonozhko

TiOх coatings are obtained by magnetron sputtering on a glass substrate, followed by vacuum photonic annealing to modify the coatings. Absolutely all samples obtained in the process of magnetron sputtering contained nonstoichiometric phases in their composition, and different O2 concentrations in plasma corresponded, in general, to different nonstoichiometric oxides, which may indicate the preferable formation of different TiO2 phases through different nonstoichiometric phases. It has been shown that with an increase in the oxygen concentration in the magnetron plasma, the structure of the coatings changes from amorphous to anatase-rutile (with a predominance of anatase). X-ray studies of the obtained samples of coatings have been carried out, which establish the role of oxygen in the crystallization of TiOx coatings, the effect of vacuum photon annealing on the formation of the anatase phase. It has been established that thermal treatment by photonic vacuum annealing at sufficiently low temperatures (350 ° C) promotes the recrystallization of all phases present in the coating into anatase phase.


2020 ◽  
Vol 65 (20) ◽  
pp. 1718-1725
Author(s):  
Qinghao Li ◽  
Ruimin Qiao ◽  
Apurva Mehta ◽  
Weiming Lü ◽  
Tie Zhou ◽  
...  

2020 ◽  
Vol MA2020-01 (40) ◽  
pp. 1782-1782
Author(s):  
Tatsuya Kawada ◽  
Chikara Sekizawa ◽  
Ryuta Sato ◽  
Satoshi Watanabe ◽  
Keiji Yashiro

2019 ◽  
Vol 44 (36) ◽  
pp. 19585-19594 ◽  
Author(s):  
Hui Kong ◽  
Xianghui Kong ◽  
Hongsheng Wang ◽  
Jian Wang

2019 ◽  
Vol 89 (6) ◽  
pp. 935
Author(s):  
Б.Е. Умирзаков ◽  
М.К. Рузибаева ◽  
З.А. Исаханов ◽  
Р.М. Ёркулов

AbstractThe composition and parameters of energy bands in thin SiO_2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO_2 films grown on thick films, the value of E _ g for thin SiO_2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO_2 film, which arise because of the impossibility of heating the system above 700 K.


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