Nanoparticles: tech trends in healthcare

Nanotechnology is the use of matter on an atomic, molecular, and supramolecular scale for various purposes. Nanotechnology field of application is very much diverse which includes surface science, organic chemistry, molecular biology, semiconductor physics, energy storage, engineering, microfabrication, and molecular engineering. Its medical application ranges from biological devices, nano-electronic biosensors, and to future biological machines. The main issue nowadays for nanomedicine involve understanding the issues related to toxicity and environmental impact of nanoscale materials. Lot more functionalities can be added to nanomaterials by interfacing them with biological structures. The size of nanomaterials is similar most biological molecules and so useful for both in vivo and in vitro biomedical research and applications. The integration of nanomaterials with biology had paved path to the development of diagnostic devices, contrast agents, analytical tools, physical therapy applications and drug delivery vehicles.

Peculiar anharmonicity of Ruddlesden Popper metalhalides: Temperature-dependent phonon dephasing

The anharmonicity of the Ruddlesden Popper metal-halide lattice, and its consequences on their electronic and optical properties, is paramount in their basic semiconductor physics. It is thus critical to identify...

Improving the Research Competence of Students in Physics (On the Example of Teaching Semiconductor Physics)

The development of the didactic provision of an improved methodology for the formation and objective assessment of the level of preparation for research activities of future physics teachers based on a competency-based approach serves to develop the component nature of future physics teachers. This article provides information about the organization of experimental work on the formation of research competencies of future physics teachers, professional tasks of a research nature of various levels of complexity; mastery of research technology.

Equipment for growing semiconductor heterostructures in outer space

This article describes the features of the equipment developed at the Rzhanov Institute of Semiconductor Physics for conducting experiments on growing semiconductor heterostructures from molecular beams in outer space under the conditions of an orbital flight of the International Space Station. Working out the processes of epitaxy of semiconductor films in outer space will allow us to grow complex semiconductor structures with sharp boundaries, which serve as the basis for the creation of solar cells, as well as devices of modern microwave, optoand microelectronics. Cascade photovoltaic converters based on such multilayer heterostructures of A3B5 semiconductor compounds have high efficiency and radiation resistance and, therefore, are most widely used for the manufacture of space solar cells. The high efficiency of such batteries is due to the wide spectral range in which solar radiation is effectively absorbed and used in photovoltaic conversion.

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.

Высокочувствительная экспрессная нелинейно-оптическая диагностика кристаллического состояния гетероструктур типа сфалерита

Stupak M.F.1,3, Mikhailov N.N.2,3, Dvoretsky S.A.2,4, Makarov S.N.1, Yelesin A.G.1, Verhoglyad A.G.1 1 Technological Design Institute of Scientific Instrument Engineering of the Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS), Novosibirsk, 630058, Russian, 41 2 The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS), Novosibirsk, 630090, etc. Akad. Lavrentieva, 13 3 Novosibirsk State University (NSU), Novosibirsk, 630090, Pirogov, 2 4 Tomsk State University (TSU), 634050, Tomsk, Etc. Lenin, 36 Tel: 7 913 948-9824, e. Mail: [email protected] Annotation. The characteristics of a highly sensitive express stand of non-linear-optical diagnosis of crystalline structures such as sphalerite by generation of the second harmonica are presented. The analysis of quantitative and qualitative characterization capabilities was carried out using the stand of features of crystalline parameters of layers of heteroepitaxial structures cdhHg1-xTe on substralis from GaAs with orientation (013). The results were obtained by deviations of orientation in layers from the orientation of the substrate, which arose during the epitaxy, to determine the existence of stresses. The high sensitivity of the stand revealed the presence/absence of micro-particles with a disordered crystalline structure. Experimental results of reversible modification of the "in situ" crystalline state of CdxHg1-xTe structures with short-term local radiation exposure of high power laser radiation are given. New experimental data have been presented showing that the components of the nonlineaic susceptibility tensor cxyz(w) of the crystalline structure of CdxHg1-xTe depend on composition and are an order of magnitude larger than similar components of tensor in CdTe and GaAs.