injection current
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2021 ◽  
Vol 104 (24) ◽  
Author(s):  
Arpit Arora ◽  
Jian Feng Kong ◽  
Justin C. W. Song

2021 ◽  
Author(s):  
Konstantin N. Savinov ◽  
Kirill M. Sabakar ◽  
Nickolay N. Golovin ◽  
Alexander K. Dmitriev

2021 ◽  
Vol 2067 (1) ◽  
pp. 012001
Author(s):  
K N Savinov ◽  
A K Dmitriev ◽  
A V Krivetskii

Abstract When pumped by a diode laser, the injection current of which is modulated simultaneously by microwave and HF signals, CPT resonances are recorded in absorption, spaced from each other by an amount equal to half of the HF modulation frequency.


Author(s):  
Zuyu Xu ◽  
Wanghao Tian ◽  
Shixian Chen ◽  
Wencheng Yue ◽  
Hongmei Du ◽  
...  
Keyword(s):  

2021 ◽  
Author(s):  
Ray-Hua Horng ◽  
Chun-Xin Ye ◽  
Po-Wei Chen ◽  
Daisuke Iida ◽  
Kazuhiro Ohkawa ◽  
...  

Abstract In this research, five sizes (100⊆100, 75⊆75, 50⊆50, 25⊆25, 10⊆10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10×10 µm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.


2021 ◽  
Vol 24 ◽  
pp. 101070
Author(s):  
Peinan Zhou ◽  
Yifei Wang ◽  
Shamima Nasreen ◽  
Yang Cao

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