Shape memory effect-induced crack closure in Si thin film deposited on a Ti–50.3Ni (at%) alloy substrate

2010 ◽  
Vol 507 (1) ◽  
pp. L8-L12 ◽  
Author(s):  
Gyu-bong Cho ◽  
Bo-min Kim ◽  
Hee-jin Choi ◽  
Jung-pil Noh ◽  
Si-young Choi ◽  
...  
2010 ◽  
Vol 654-656 ◽  
pp. 2107-2110
Author(s):  
Jun Hyun Han ◽  
Tae Ahn ◽  
Hyun Kim ◽  
Kwang Koo Jee

The shape memory effect (SME) and magnetic shape memory effect (MSME) Fe-Pd thin film are using the film curvature method. The corresponding residual stress change due to theSME and MSME in Fe-Pd film is measuredduring thermal cycling and magnetic field changing. AFe-Pd thin film with a lateral composition gradient is deposited onto micromachined x7 cantilever beam arraysubstrate,such that each of the cantilever beams is coated with a film of different composition.There is abrupt stress change in only .1 at % Pd as the temperature of the film is cycled, and the corresponding stress change was measured as 0.16 GPa. The film with .4 at % Pd showsthe abrupt stress change at 0.7 Tesla, which means that the composition has the MSME.


2000 ◽  
Vol 12 (1/2) ◽  
pp. 44-45 ◽  
Author(s):  
Hiromasa YABE ◽  
Rie FUJII ◽  
Yoshitake NISHI ◽  
Kazuya OGURI ◽  
Haru-hisa UCHIDA ◽  
...  

2006 ◽  
Vol 438-440 ◽  
pp. 940-943 ◽  
Author(s):  
M. Kohl ◽  
A. Agarwal ◽  
V.A. Chernenko ◽  
M. Ohtsuka ◽  
K. Seemann

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 78-81 ◽  
Author(s):  
Jian Yao ◽  
Bo Cui ◽  
Xiaohang Zheng ◽  
Ye Wu ◽  
Jiehe Sui ◽  
...  

1994 ◽  
Vol 360 ◽  
Author(s):  
A.Peter Jardine

AbstractSputter deposition of TiNi has been problematic due to the extreme reactivity of titanium. There are several advantages in depositing TiNi with other metals, such as Ti and Cu, as the Shape Memory Effect properties can be changed selectively, including coring of the thin film. Simultaneous co-deposition of cored material using sputter deposition becomes technically difficult as this implies that the sample to target distance increases. In this paper, we discuss a relationship developed so that a basic base vacuum pressure can be found with target-sample distance and correlated with the observed phases for both Ti and TiNi samples. Practical limitations imposed by the vacuum system on both devices and device quality are discussed


1992 ◽  
Vol 276 ◽  
Author(s):  
A. Peter Jardine

ABSTRACTActive and adaptive thin film materials for “smart” materials will likely be a heterostructure of several types of thin films. In this investigation, deposition and processing of thin film Shape Memory Effect TiNi and thin film ferroelectric BaTiO3 and SrTiO3 are discussed. Growth conditions as well as the thermodynamic conditions for thin films are described. It was found that amorphous thin films of TiNi and BaTiO3 can be crystallized simultaneously by air annealing at 600°C.


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