Materials Development of Thin Film TiNi Ferroelastic-Ferroelectric Heterostructures

1992 ◽  
Vol 276 ◽  
Author(s):  
A. Peter Jardine

ABSTRACTActive and adaptive thin film materials for “smart” materials will likely be a heterostructure of several types of thin films. In this investigation, deposition and processing of thin film Shape Memory Effect TiNi and thin film ferroelectric BaTiO3 and SrTiO3 are discussed. Growth conditions as well as the thermodynamic conditions for thin films are described. It was found that amorphous thin films of TiNi and BaTiO3 can be crystallized simultaneously by air annealing at 600°C.

1999 ◽  
Vol 596 ◽  
Author(s):  
W. Biegel ◽  
R. Klarmann ◽  
M. Kuhn ◽  
B. Wörz ◽  
B. Stritzker

AbstractPulsed Laser Deposition (PLD) was used to deposit La-doped Pb(Zr,Ti)O3 (PZT) thin films onto NiTi foils. The substrate alloy with composition Ni50Ti50 shows a strong shape memory effect with a transition temperature of about 80°C. This simple bicomponental system could have the potential of an actuator device (NiTi shows a strain up to 5 % during thermal cycling) with an inherent sensorial component (PZT) for the generated elongation. The deposited ceramic films were characterized with respect to their structural properties (XRD) and their ferroelectric behavior (P-E hysteresis). Under certain deposition conditions the growth of pure perovskite PZT on the polycrystalline shape memory alloy was observed. The growth morphology of PZT on NiTi was compared to the one of PZT on single crystalline substrates whereas no distinctive texture of the films on NiTi could be found. The ferroelectric behavior of the PZT films depend on the stage of bending of the film-substrate compound.


2008 ◽  
Vol 481-482 ◽  
pp. 426-430 ◽  
Author(s):  
F.C. Lovey ◽  
A.M. Condó ◽  
J. Guimpel ◽  
M.J. Yacamán

2010 ◽  
Vol 507 (1) ◽  
pp. L8-L12 ◽  
Author(s):  
Gyu-bong Cho ◽  
Bo-min Kim ◽  
Hee-jin Choi ◽  
Jung-pil Noh ◽  
Si-young Choi ◽  
...  

2010 ◽  
Vol 654-656 ◽  
pp. 2107-2110
Author(s):  
Jun Hyun Han ◽  
Tae Ahn ◽  
Hyun Kim ◽  
Kwang Koo Jee

The shape memory effect (SME) and magnetic shape memory effect (MSME) Fe-Pd thin film are using the film curvature method. The corresponding residual stress change due to theSME and MSME in Fe-Pd film is measuredduring thermal cycling and magnetic field changing. AFe-Pd thin film with a lateral composition gradient is deposited onto micromachined x7 cantilever beam arraysubstrate,such that each of the cantilever beams is coated with a film of different composition.There is abrupt stress change in only .1 at % Pd as the temperature of the film is cycled, and the corresponding stress change was measured as 0.16 GPa. The film with .4 at % Pd showsthe abrupt stress change at 0.7 Tesla, which means that the composition has the MSME.


2000 ◽  
Vol 12 (1/2) ◽  
pp. 44-45 ◽  
Author(s):  
Hiromasa YABE ◽  
Rie FUJII ◽  
Yoshitake NISHI ◽  
Kazuya OGURI ◽  
Haru-hisa UCHIDA ◽  
...  

2006 ◽  
Vol 438-440 ◽  
pp. 940-943 ◽  
Author(s):  
M. Kohl ◽  
A. Agarwal ◽  
V.A. Chernenko ◽  
M. Ohtsuka ◽  
K. Seemann

Sign in / Sign up

Export Citation Format

Share Document