A 20.5-dBm $X$ -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology

2019 ◽  
Vol 29 (3) ◽  
pp. 234-236 ◽  
Author(s):  
Van-Son Trinh ◽  
Hyohyun Nam ◽  
Jung-Dong Park
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Band Power

scholarly journals Design of a V Band Power Amplifier Using 65 nm CMOS Technology

2013 ◽  
Vol 24 (4) ◽  
pp. 403-409
Author(s):  
Sungah Lee ◽  
Chenglin Cui ◽  
Seong-Kyun Kim ◽  
Byung-Sung Kim
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
V Band ◽  
Band Power

Wideband transformer-coupled E-band power amplifier in 90 nm CMOS

2012 ◽  
Vol 5 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Igor Gertman ◽  
Eran Socher
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Wave Power ◽  
Peak Output Power ◽  
Low Leakage ◽  
Band Power ◽  
Bond Pads ◽  
Dc Current ◽  
Peak Gain ◽  
Better Than

In this work, the design of the wideband millimeter-wave power amplifier for multiband communication is presented. In order to achieve compact, simple and robust design, a differential cascade transformer-coupled topology is used. The amplifier is implemented in 90 nm low-leakage CMOS technology and achieves 3 dB bandwidth of 8 GHz (from 60 to 68 GHz) and a peak gain of 18 dB. The PO1dB is better than 5 dBm from 58 to 80 GHz, and peak output power is 11.9 dBm with 1 dB flatness from 62 to 77 GHz. The chip consumes an area of 0.25 mm2 including bond pads and DC current of 125 mA from a 2.2 V supply.

1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology

2013 ◽  
Author(s):  
Uroschanit Yodprasit ◽  
Kosuke Katayama ◽  
Ryuichi Fujimoto ◽  
Mizuki Motoyoshi ◽  
Minoru Fujishima
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Band Power ◽  
W Band

scholarly journals Design of a W-Band Power Amplifier Using 65 nm CMOS Technology

2016 ◽  
Vol 27 (3) ◽  
pp. 330-333
Author(s):  
Jun-Seong Kim ◽  
Oh-yun Kwon ◽  
Reem Song ◽  
Byung-Sung Kim
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Band Power ◽  
W Band

Failure Localization in a Multistage S-Band Power Amplifier

2016 ◽  
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Fault Tree ◽  
Root Cause ◽  
Failure Investigation ◽  
Band Power ◽  
Cause Of Failure ◽  
Design Materials ◽  
Board Level ◽  
Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

A compact H-band Power Amplifier with High Output Power

2021 ◽  
Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Output Power ◽  
Band Power ◽  
High Output
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