Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

2011 ◽  
Vol 110 (11) ◽  
pp. 113110 ◽  
Author(s):  
Jing Zhang ◽  
Nelson Tansu
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Light Emitting Diodes ◽  
Emission Rates ◽  
Light Emitting ◽  
Ingan Quantum Wells

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

2011 ◽  
Author(s):  
Hongping Zhao ◽  
Jing Zhang ◽  
Guangyu Liu ◽  
Takahiro Toma ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells
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