Quantum well electron scattering rates through longitudinal optic-phonon dynamical screened interaction: An analytic approach

The photoluminescence spectrum and transient behaviour of free and bound excitons in CdSe have been studied with both resonant and above band-gap excitation. The free- and bound-exciton lifetimes were found to be excitation-intensity dependent even at very low levels. In all cases, the free-exciton luminescence decayed more rapidly than that of the bound excitons. A comparison of the no-phonon and longitudinal-optic-phonon replicas of the free-exciton luminescence indicates that the observed doublet structure of the no-phonon spectrum arises from the two polariton branches. Resonant excitation of the donor and acceptor bound excitons revealed two-electron and two-hole replicas, respectively. We believe these to be the first reported two-hole transitions in CdSe. The initial rapid cooling of the free-exciton gas could be observed in a series of time-resolved spectra.

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Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films

Applied Physics Letters ◽

10.1063/1.3670338 ◽

2011 ◽

Vol 99 (25) ◽

pp. 251904 ◽

Cited By ~ 7

Author(s):

Jung Gon Kim ◽

Atsuhito Kimura ◽

Yasuhito Kamei ◽

Noriyuki Hasuike ◽

Hiroshi Harima ◽

...

Keyword(s):

Alloy Films ◽

Coupled Mode ◽

Optic Phonon ◽

Longitudinal Optic ◽

Longitudinal Optic Phonon

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Coupled longitudinal optic phonon-plasmon modes in p-type GaN

Solid State Communications ◽

10.1016/s0038-1098(98)00093-3 ◽

1998 ◽

Vol 106 (8) ◽

pp. 491-494 ◽

Cited By ~ 26

Author(s):

F. Demangeot ◽

J. Frandon ◽

M.A. Renucci ◽

N. Grandjean ◽

B. Beaumont ◽

...

Keyword(s):

Optic Phonon ◽

Longitudinal Optic ◽

Longitudinal Optic Phonon ◽

P Type ◽

Plasmon Modes

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Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Applied Physics Letters ◽

10.1063/1.1396818 ◽

2001 ◽

Vol 79 (9) ◽

pp. 1375-1377

Author(s):

C. P. Jiang ◽

Z. M. Huang ◽

Z. F. Li ◽

J. Yu ◽

S. L. Guo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Plasmon Coupling ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Optic Phonon ◽

Longitudinal Optic ◽

Longitudinal Optic Phonon

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Microraman Characterization Of Microdefects In Bulk Sic

MRS Proceedings ◽

10.1557/proc-483-241 ◽

1997 ◽

Vol 483 ◽

Author(s):

E. Martín ◽

M. Chafai ◽

J. Jiménez

Keyword(s):

Donor Concentration ◽

Disorder Effects ◽

Crystal Matrix ◽

Local Fluctuations ◽

Optic Phonon ◽

Raman Modes ◽

Longitudinal Optic ◽

Longitudinal Optic Phonon ◽

Microraman Spectroscopy

AbstractMicroRaman spectroscopy is used for characterizing defects in large SiC crystals with micrometer spatial resolution. The ability to identify microscopic inclusions of polytypes different than the crystal matrix is demonstrated; silicon and carbon inclusions and disorder effects are found in micropipes. A study of the Longitudinal Optic Phonon Plasmon Coupled (LOPC) Raman modes allowed to obtain local fluctuations of the net donor concentration, ND-NA, and the electron mobility around defects, which allowed impurity gettering effects to be observed.

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