scholarly journals Erratum: “Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films” [Appl. Phys. Lett. 99, 251904 (2011)]

2012 ◽  
Vol 100 (13) ◽  
pp. 139901
Author(s):  
Jung Gon Kim ◽  
Atsuhito Kimura ◽  
Yasuhito Kamei ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
...  
Keyword(s):  
Alloy Films ◽  
Coupled Mode ◽  
Optic Phonon ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon

Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films

2011 ◽  
Vol 99 (25) ◽  
pp. 251904 ◽  
Author(s):  
Jung Gon Kim ◽  
Atsuhito Kimura ◽  
Yasuhito Kamei ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
...  
Keyword(s):  
Alloy Films ◽  
Coupled Mode ◽  
Optic Phonon ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon

Subnanosecond transient studies of intrinsic and extrinsic luminescence in CdSe

1985 ◽  
Vol 63 (9) ◽  
pp. 1205-1211 ◽  
Author(s):  
T. Steiner ◽  
M. L. W. Thewalt
Keyword(s):  
Free Exciton ◽  
Exciton Luminescence ◽  
Time Resolved ◽  
Transient Behaviour ◽  
Doublet Structure ◽  
Donor And Acceptor ◽  
Optic Phonon ◽  
Longitudinal Optic ◽  
Low Levels ◽  
Longitudinal Optic Phonon

The photoluminescence spectrum and transient behaviour of free and bound excitons in CdSe have been studied with both resonant and above band-gap excitation. The free- and bound-exciton lifetimes were found to be excitation-intensity dependent even at very low levels. In all cases, the free-exciton luminescence decayed more rapidly than that of the bound excitons. A comparison of the no-phonon and longitudinal-optic-phonon replicas of the free-exciton luminescence indicates that the observed doublet structure of the no-phonon spectrum arises from the two polariton branches. Resonant excitation of the donor and acceptor bound excitons revealed two-electron and two-hole replicas, respectively. We believe these to be the first reported two-hole transitions in CdSe. The initial rapid cooling of the free-exciton gas could be observed in a series of time-resolved spectra.

Coupled longitudinal optic phonon-plasmon modes in p-type GaN

1998 ◽  
Vol 106 (8) ◽  
pp. 491-494 ◽  
Author(s):  
F. Demangeot ◽  
J. Frandon ◽  
M.A. Renucci ◽  
N. Grandjean ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Optic Phonon ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon ◽  
P Type ◽  
Plasmon Modes

Microraman Characterization Of Microdefects In Bulk Sic

1997 ◽  
Vol 483 ◽  
Author(s):  
E. Martín ◽  
M. Chafai ◽  
J. Jiménez
Keyword(s):  
Donor Concentration ◽  
Disorder Effects ◽  
Crystal Matrix ◽  
Local Fluctuations ◽  
Optic Phonon ◽  
Raman Modes ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon ◽  
Microraman Spectroscopy

AbstractMicroRaman spectroscopy is used for characterizing defects in large SiC crystals with micrometer spatial resolution. The ability to identify microscopic inclusions of polytypes different than the crystal matrix is demonstrated; silicon and carbon inclusions and disorder effects are found in micropipes. A study of the Longitudinal Optic Phonon Plasmon Coupled (LOPC) Raman modes allowed to obtain local fluctuations of the net donor concentration, ND-NA, and the electron mobility around defects, which allowed impurity gettering effects to be observed.

Infrared Absorption by Coupled Collective Cyclotron Excitation-Longitudinal-Optic Phonon Modes in InSb

1967 ◽  
Vol 18 (5) ◽  
pp. 159-162 ◽  
Author(s):  
R. Kaplan ◽  
E. D. Palik ◽  
R. F. Wallis ◽  
S. Iwasa ◽  
E. Burstein ◽  
...  
Keyword(s):  
Infrared Absorption ◽  
Phonon Modes ◽  
Optic Phonon ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon

Picosecond Raman light-scattering study of hot carriers in InP

1987 ◽  
Vol 65 (8) ◽  
pp. 831-837 ◽  
Author(s):  
Kam Wan ◽  
Jeff F. Young ◽  
A. J. SpringThorpe
Keyword(s):  
Diffusion Constant ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Uniform Density ◽  
Time Resolved ◽  
Coupled Mode ◽  
Longitudinal Optic ◽  
Longitudinal Optic Phonon ◽  
Recombination Velocity ◽  
Nonequilibrium Carriers

We demonstrate a novel method of using picosecond time-resolved Raman scattering to study the kinetics of nonequilibrium carriers in semiconductors. A pump–probe technique employing two separate lasers of different intensities, focal-spot sizes, and pulse durations is used to ensure that a plasma of uniform density is probed. The nonequilibrium-carrier density near the surface of a semi-insulating InP sample is estimated by fitting the photoexcited plasmon – longitudinal optic phonon coupled-mode peak in the Raman spectra. The dielectric function used in the calculation includes contributions from intraband transitions of electrons, light holes, and heavy holes as well as from interband transitions of the holes. The temporal evolution of the optically excited carrier population is modelled using a one-dimensional diffusion equation. The ambipolar diffusion constant and the surface-recombination velocity of the nonequilibrium carriers are found to be comparable to estimated values based on extrapolation of equilibrium properties.

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