scholarly journals A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding

2011 ◽  
Vol 21 (4) ◽  
pp. 045020 ◽  
Author(s):  
T V Galchev ◽  
W C Welch ◽  
K Najafi
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Wafer Bonding ◽  
High Aspect Ratio ◽  
Mems Process

scholarly journals Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1481
Author(s):  
Adrian J. T. Teo ◽  
King Ho Holden Li
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Resonant Frequency ◽  
Tilt Angle ◽  
Wafer Bonding ◽  
High Aspect Ratio ◽  
Silicon On Insulator ◽  
Future Design ◽  
Comb Structure ◽  
Cmos Compatible

A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.

EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures Using a Low-Cost Automated Batch Process

1999 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Gang Zhang ◽  
Uri Frodis ◽  
Adam Cohen ◽  
Florian Mansfeld ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Batch Process ◽  
Unlimited Number ◽  
Metal Layers ◽  
Electrochemical Fabrication ◽  
Low Temperature Process

Abstract EFAB (“Electrochemical FABrication”) is a new micromachining process utilizing an innovative “Instant Masking” (IM) technique to electrochemically deposit an unlimited number of metal layers for microfabrication. Through this approach, high-aspect-ratio microstructures with arbitrary 3-D geometry can be rapidly and automatically batch-fabricated at low temperature (< 60 °C) using an inexpensive desktop machine. IC-MEMS integration can also be carried out by this low temperature process.

scholarly journals Low temperature fabrication of Fe2O3 nanorod film coated with ultra-thin g-C3N4 for a direct z-scheme exerting photocatalytic activities

RSC Advances ◽  
2018 ◽  
Vol 8 (59) ◽  
pp. 33600-33613 ◽  
Author(s):  
Suhee Kang ◽  
Joonyoung Jang ◽  
Rajendra C. Pawar ◽  
Sung-Hoon Ahn ◽  
Caroline Sunyong Lee
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Photocatalytic Activities

The engineered high aspect ratio of Fe2O3 nanorods coated with g-C3N4 demonstrates z-scheme mechanism, showing the best performance in 4-nitrophenol photodegradation and H2 evolution.

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

2014 ◽  
Vol 53 (6) ◽  
pp. 068007 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Sangsu Park ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio

Low Temperature Copper Deposition by PE-ALD

2009 ◽  
Vol 1195 ◽  
Author(s):  
Jiajun Mao ◽  
Eric Eisenbraun ◽  
Vincent Omarjee ◽  
Clement Lanslot ◽  
Christian Dussarrat
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Deposition Rate ◽  
Electrochemical Deposition ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Surface Coverage ◽  
Copper Deposition ◽  
Process Conditions ◽  
Film Properties

AbstractWith the continuing scaling in device sizes, sputtered copper is not expected to achieve the conformality and surface coverage requirements to be an effective seed layer for electrochemical deposition in sub-32nm features. Additionally, the metallization demands of high aspect ratio TSVs in 3D-architectures pose similar challenges. In this work, a manufacturable low temperature Cu PE-ALD process has been developed employing a novel O and F-free precursor. The ALD process conditions are correlated with key film properties, including deposition rate, composition, step coverage, and resistivity. Additionally, the influence of precursor substituents on the deposition rate and preliminary integration performance are discussed.

scholarly journals Torsion Testing Of Diffusion Bonded Liga Formed Nickel

1998 ◽  
Vol 546 ◽  
Author(s):  
T. R. Christenson ◽  
T. E. Buchheit ◽  
D. T. Schmale
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Bond Strength ◽  
Mechanical Strength ◽  
High Aspect Ratio ◽  
Strength Degradation ◽  
Test Technique ◽  
Torsion Testing

AbstractA test technique has been devised which is suitable for the testing of the bond strength of batch diffusion bonded LIGA or DXRL defined structures. The method uses a torsion tester constructed with the aid of LIGA fabrication and distributed torsion specimens which also make use of the high aspect ratio nature of DXRL based processing. Measurements reveal achieved bond stengths of 130 MPa between electroplated nickel with a bond temperature of 450°C at 7 ksi pressure which is a sufficiently low temperature to avoid mechanical strength degradation.

Sign in / Sign up

Export Citation Format

Share Document