A 77 GHz Power Amplifier for Low Cost Radar Transmitters in a 55-nm CMOS Technology

2021 ◽  
Author(s):  
Viet-Hoang Le ◽  
Quang-Diep Bui ◽  
Haifeng Luo ◽  
Shenghao Li ◽  
Yuan Xuan ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Low Cost ◽  
Cmos Technology ◽  
77 Ghz

Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

2010 ◽  
Vol 20 (5) ◽  
pp. 292-294 ◽  
Author(s):  
Jau-Jr Lin ◽  
Kun-Hin To ◽  
Donna Hammock ◽  
Bill Knappenberger ◽  
Michael Majerus ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Automotive Radar ◽  
77 Ghz

scholarly journals A 65nm CMOS 60 GHz Class F-E Power Amplifier for WPAN Applications

2013 ◽  
Vol 8 (1) ◽  
pp. 7-13
Author(s):  
N. Deltimple ◽  
S. Dréan ◽  
E. Kerhervé ◽  
B. Martineau ◽  
D. Belot
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Low Cost ◽  
Cmos Technology ◽  
Area Network ◽  
60 Ghz ◽  
Power Stage ◽  
Lumped Elements ◽  
Class E ◽  
Class F

This work presents a two-stage 60 GHz Power Amplifier designed in a 65nm CMOS technology dedicated to low cost Wireless Personal Area Network (WPAN) applications. In order to provide a high efficiency operation, the PA is based on a Class E power stage. A Class F driver stage is also designed to provide a square waveform signal to the Class-E power stage. To realize the output networks of both driver and power stage at 60 GHz, distributed elements are used instead of lumped elements. The post-layout simulation results show a saturated output power of 15 dBm with a peak PAE of 26% at 60 GHz. It achieves a gain of 15dB at 60 GHz.

scholarly journals A Comparative Analysis between Standard and mm-Wave Optimized BEOL in a Nanoscale CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2124
Author(s):  
Egidio Ragonese ◽  
Claudio Nocera ◽  
Andrea Cavarra ◽  
Giuseppe Papotto ◽  
Simone Spataro ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Low Cost ◽  
Cmos Technology ◽  
Actual Performance ◽  
Performance Improvements ◽  
Nanoscale Cmos ◽  
Medium Range ◽  
Radar Applications ◽  
First Time ◽  
77 Ghz

This paper presents an extensive comparison of two 28-nm CMOS technologies, i.e., standard and mm-wave-optimized (i.e., thick metals and intermetal oxides) back-end-of-line (BEOL). The proposed comparison is carried out at both component and circuit level by means of a quantitative analysis of the actual performance improvements due to the adoption of a mm-wave-optimized BEOL. To this end, stand-alone transformer performance is first evaluated and then a complete mm-wave macroblock is investigated. A 77-GHz down-converter for frequency modulated continuous wave (FMCW) long-range/medium range (LR/MR) radar applications is exploited as a testbench. For the first time, it is demonstrated that thicker metals and intermetal oxides do not guarantee significant improvements at mm-wave frequencies and a standard (low-cost) BEOL is competitive in comparison with more complex (expensive) ones.

A 77 GHz low noise amplifier using low-cost 0.13µm CMOS technology

2009 ◽  
Author(s):  
M. Fahimnia ◽  
M.R. Nezhad-Ahamadi ◽  
B. Biglarbeigian ◽  
S. Safavi-Naieni ◽  
M. Mohammad-Taheri ◽  
...  
Keyword(s):  
Low Cost ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier ◽  
77 Ghz

A High Gain 77 GHz Power Amplifier Operating at 0.7 V Based on 90 nm CMOS Technology

2009 ◽  
Vol 19 (5) ◽  
pp. 329-331 ◽  
Author(s):  
Y. Hamada ◽  
M. Tanomura ◽  
M. Ito ◽  
K. Maruhashi
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
High Gain ◽  
77 Ghz
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