scholarly journals Effects of External Magnetic Field and Air Mass on Space Charge Region Width Extension of a Bifacial Solar Cell Front Side Illumination

2020 ◽  
Vol 9 (3) ◽  
pp. 29
Author(s):  
Alain Diasso ◽  
Raguilignaba Sam ◽  
Nazé Yacouba Traoré ◽  
François Zougmoré
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
External Magnetic Field ◽  
Space Charge ◽  
Space Charge Region ◽  
Front Side ◽  
Air Mass ◽  
Cell Front ◽  
Bifacial Solar Cell ◽  
Side Illumination

Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

Nanoscale ◽  
2014 ◽  
Vol 6 (8) ◽  
pp. 3978-3983 ◽  
Author(s):  
Tao Wang ◽  
Mingsu Si ◽  
Dezheng Yang ◽  
Zhong Shi ◽  
Fangcong Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Space Charge ◽  
Angular Dependence ◽  
Space Charge Region ◽  
Magnetoresistance Effect ◽  
Junction Device ◽  
Mr Effect ◽  
Silicon Based

Anisotropic MR effect is seen in a non-magnetic p–n junction due to the space charge region being modulated by an external magnetic field.

SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON

2012 ◽  
Vol 26 (08) ◽  
pp. 1250048 ◽  
Author(s):  
KANKAN CONG ◽  
YANG JI
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Space Charge ◽  
Space Charge Effect ◽  
Charge Effect ◽  
Temperature Range ◽  
Ohmic Behavior ◽  
Current Voltage ◽  
Doped Silicon ◽  
High Bias

We report experimental results on current–voltage characteristics of Au-Ti/n-Si/Au-Ti devices made on unintentionally n-doped silicon, which depend dramatically on temperature and external magnetic field. While such devices show Ohmic behavior in the temperature range 154–300 K, space-charge effect dominates at high bias voltages in the temperature range 77–154 K. In the later case, external magnetic field may increase its breakdown voltage, thus inducing large positive magnetoresistance similar to those reported by other groups.

Numerical investigation of influence of ionic space charge and flexoelectric polarization on measurements of elastic constants in nematic liquid crystals

2009 ◽  
Vol 17 (2) ◽  
Author(s):  
M. Buczkowska ◽  
G. Derfel ◽  
M. Konowalski
Keyword(s):  
Magnetic Field ◽  
Liquid Crystal ◽  
Liquid Crystals ◽  
External Magnetic Field ◽  
Space Charge ◽  
Elastic Constants ◽  
High Concentration ◽  
Light Passing ◽  
The Magnetic Field

AbstractDeformations of nematic layers caused by magnetic field allow determination of the elastic constants of liquid crystal. In this paper, we simulated numerically the deformations of planar and homeotropic nematic layers. The flexoelectric properties of the nematic and presence of ions were taken into account. Our aim was to show the influence of flexoelectricity on the results of the real measurement of the elastic constants k33 and k11. In these simulations, we calculated the optical phase difference ΔΦ between the ordinary and extraordinary rays of light passing through the layer placed between crossed polarizers as a function of the magnetic field induction B. One of the elastic constants can be calculated from the magnetic field threshold for deformation. The ratio k33/k11 can be found by means of fitting theoretical ΔΦ(B) dependence to the experimental results. The calculations reveal that the flexoelectric properties influence the deformations induced by the external magnetic field. In the case of highly pure samples, this may lead to false results of measurement of the elastic constants ratio k33/k11. This influence can be reduced if the nematic material contains ions of sufficiently high concentration. These results show that the flexoelectric properties may play an important role, especially in well purified samples.

Enhanced absorption in the space charge region of GaAs solar cells

2021 ◽  
Author(s):  
Yangfeng Li ◽  
Wenqi Wang ◽  
Chen Yue ◽  
Xiaotao Hu ◽  
Yimeng Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Absorption Coefficient ◽  
Space Charge ◽  
Space Charge Region ◽  
Solar Spectrum ◽  
Enhanced Absorption

Abstract The photo-generated currents of GaAs solar cells with different lengths of space charge region are obtained and analyzed in this study. The enhanced absorption coefficient in the space charge region is adopted to calculate the photo-generated current based on the solar cell physics theory. The calculated currents coincide well with the experimental currents both under single wavelength incidence and solar spectrum irradiation conditions.

scholarly journals Base Transceiver Station (BTS) Antenna Electric Field Influence on the Space Charge Region in a Silicon Solar Cell

2014 ◽  
Vol 7 (12) ◽  
pp. 2554-2558 ◽  
Author(s):  
Ali Moissi ◽  
Martial Zoungrana ◽  
Abdourrahmane Diallo ◽  
Senghane Mbodji ◽  
Hawa Ly Diallo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cell ◽  
Base Transceiver Station ◽  
Field Influence

Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating SiNx layers

2010 ◽  
Vol 108 (11) ◽  
pp. 114514 ◽  
Author(s):  
Sonja Hermann ◽  
Tara Dezhdar ◽  
Nils-Peter Harder ◽  
Rolf Brendel ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Solar Cell ◽  
Laser Ablation ◽  
Laser Pulse ◽  
Surface Topography ◽  
Pulse Duration ◽  
Laser Pulse Duration ◽  
Front Side ◽  
Cell Front

scholarly journals Optimizing the Solar Cell Front Side Metallization and the Cell Interconnection for High Module Power Output

2016 ◽  
Vol 92 ◽  
pp. 531-539 ◽  
Author(s):  
Robert Witteck ◽  
Henning Schulte-Huxel ◽  
Hendrik Holst ◽  
David Hinken ◽  
Malte Vogt ◽  
...  
Keyword(s):  
Solar Cell ◽  
Power Output ◽  
Front Side ◽  
Cell Front

scholarly journals Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit

2021 ◽  
Vol 11 (2) ◽  
pp. 1-7
Author(s):  
A. D. Péné ◽  
◽  
F. I. Barro ◽  
M. Kamta ◽  
L. Bitjoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Magnetic Field Effect ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Cell Front ◽  
Static Regime ◽  
Recombination Velocity

The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.

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