scholarly journals Исследование омических контактов мощных фотоэлектрических преобразователей

2019 ◽  
Vol 45 (1) ◽  
pp. 12
Author(s):  
А.В. Малевская ◽  
В.П. Хвостиков ◽  
Ф.Ю. Солдатенков ◽  
О.А. Хвостикова ◽  
А.С. Власов ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electrochemical Deposition ◽  
Doping Level ◽  
Carrier Density ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Free Carrier ◽  
Contact Resistivity ◽  
Free Carrier Density

AbstractOhmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.

Magnetic Coupling in La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 Trilayers

2009 ◽  
Vol 289-292 ◽  
pp. 303-309
Author(s):  
N.M. Nemes ◽  
C. Visani ◽  
J. Garcia-Barriocanal ◽  
F.Y. Bruno ◽  
Z. Sefrioui ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Carrier Density ◽  
High Temperature Superconductor ◽  
Hysteresis Loops ◽  
Magnetic Coupling ◽  
Oxygen Depletion ◽  
Free Carrier ◽  
Half Metallic ◽  
Free Carrier Density

We report on the interplay between ferromagnetism and superconductivity in trilayers La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 made of half metallic manganite and high temperature superconductor cuprate. Samples with a fully oxygenated cuprate show a magnetic field interval where the magnetizations of the manganite are aligned antiparallel. A considerable magnetoresistance accompanies the switching between magnetization configurations (parallel vs. antiparallel) of the manganite moments. Suppression of the free carrier density of the cuprate which occurs upon oxygen depletion, results in deep modifications in the shape of the normal state hysteresis loops indicating that there may be a magnetic coupling mediated by free carrier density of the cuprate. This result outlines the importance of quasiparticle transmission in the interplay between ferromagnetism and superconductivity in this kind of samples.

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Gas Flow ◽  
Strong Relationship ◽  
Free Carrier ◽  
Silicon Substrates ◽  
Accurate Analysis ◽  
Si Substrates ◽  
Free Carrier Density ◽  
Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

Thermographic imaging of free carrier density in silicon for solar cells

2004 ◽  
Vol 1 (1) ◽  
pp. 89-98
Author(s):  
Martin C. Schubert ◽  
Jörg Isenberg ◽  
Stephan Riepe ◽  
Wilhelm Warta
Keyword(s):  
Solar Cells ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density ◽  
Thermographic Imaging

Determining the Free Carrier Density in Cd x Hg1–xTe Solid Solutions from Far-Infrared Reflection Spectra

2017 ◽  
Vol 51 (13) ◽  
pp. 1732-1736
Author(s):  
A. G. Belov ◽  
I. A. Denisov ◽  
V. E. Kanevskii ◽  
N. V. Pashkova ◽  
A. P. Lysenko
Keyword(s):  
Solid Solutions ◽  
Carrier Density ◽  
Far Infrared ◽  
Free Carrier ◽  
Reflection Spectra ◽  
Free Carrier Density ◽  
Infrared Reflection

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBD08
Author(s):  
Shogo Sekine ◽  
Masakazu Okada ◽  
Teruaki Kumazawa ◽  
Mitsuru Sometani ◽  
Hirohisa Hirai ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density ◽  
Density Enhancement

Structure and Electrical Properties of Cu/Ge Ohmic Contacts

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Oktyabrsky ◽  
M. O. Aboelfotoh ◽  
J. Narayan
Keyword(s):  
Ohmic Contacts ◽  
Contact Layer ◽  
Interfacial Microstructure ◽  
Contact Resistivity ◽  
Electrical Characteristics ◽  
Secondary Phases ◽  
Gaas Substrates ◽  
Wide Range ◽  
Specific Contact ◽  
Average Lattice

AbstractChemistry, crystal structure, interfacial microstructure and electrical characteristics of novel Cu-Ge alloyed ohmic contacts to n-type GaAs with a very low specific contact resistivity ((4–6)×10−7 Ω·cm2 for n∼1×1017 cm−3) were investigated by various methods. The Cu-Ge alloys with a wide range of Ge concentration, from 15 to 40 at %, were prepared by depositing sequentially Cu and Ge layers (or vise versa) onto GaAs substrates at room temperature followed by annealing at 400°C. It is shown that Cu reacts only with Ge to form the ξ and ε1-Cu3Ge phases. The latter has an orthorhombic structure with average lattice parameters: a = 5.301 Å, bo = 4.204 Å, co = 4.555 Å, arising from the parent hexagonal ξ-phase by Cu-Ge ordering along ao. The interface with GaAs is atomically sharp and free from secondary phases. The ε1-Cu3Ge ordered phase which is chemically inert with respect to GaAs, is believed to be responsible for high thermal stability (up to 450°C), interface sharpness, high contact layer uniformity and low specific resistivity of 6 μΩ cm. Formation of the Cu-Ge phases creates a highly doped n+-GaAs surface layer which leads to the low contact resistivity.

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