Reduced RTN Amplitude and Single Trap induced Variation for Ferroelectric FinFET by Substrate Doping Optimization

2019 ◽  
Author(s):  
Zih-Tang Lin ◽  
Vita Pi-Ho Hu
Keyword(s):  
Induced Variation ◽  
Substrate Doping

Photo-induced variation of magnetism in coordination polymers with ligand-based electron transfer

2021 ◽  
Author(s):  
Yan-Lei Lu ◽  
Wen-Long Lan ◽  
Wei Shi ◽  
Qionghua Jin ◽  
Peng Cheng
Keyword(s):  
Electron Transfer ◽  
Coordination Polymers ◽  
Optical Memory ◽  
High Density ◽  
Information Storage ◽  
Memory Devices ◽  
Storage Materials ◽  
Potential Applications ◽  
Induced Variation

Photo-induced variation of magnetism from ligand-based electron transfer have been extensively studied because of their potential applications in magneto-optical memory devices, light-responsive switches, and high-density information storage materials. In this...

scholarly journals Barley somatic embryogenesis-an attempt to modify variation induced in tissue culture

2021 ◽  
Vol 28 (1) ◽  
Author(s):  
Renata Orłowska
Keyword(s):  
Tissue Culture ◽  
Somatic Embryogenesis ◽  
Taguchi Method ◽  
Culture Conditions ◽  
Dna Demethylation ◽  
Silver Ion ◽  
Donor Plant ◽  
In Vitro Tissue Culture ◽  
Induced Variation

Abstract Background Somatic embryogenesis is a phenomenon carried out in an environment that generates abiotic stress. Thus, regenerants may differ from the source of explants at the morphological, genetic, and epigenetic levels. The DNA changes may be the outcome of induction media ingredients (i.e., copper and silver ions) and their concentrations and time of in vitro cultures. Results This study optimised the level of copper and silver ion concentration in culture media parallel with the induction medium longevity step towards obtaining barley regenerants via somatic embryogenesis with a minimum or maximum level of tissue culture-induced differences between the donor plant and its regenerants. The optimisation process is based on tissue culture-induced variation evaluated via the metAFLP approach for regenerants derived under varying in vitro tissue culture conditions and exploited by the Taguchi method. In the optimisation and verification experiments, various copper and silver ion concentrations and the different number of days differentiated the tested trials concerning the tissue culture-induced variation level, DNA demethylation, and de novo methylation, including symmetric (CG, CHG) and asymmetric (CHH) DNA sequence contexts. Verification of optimised conditions towards obtaining regenerants with minimum and maximum variability compared to donor plants proved useful. The main changes that discriminate optimised conditions belonged to DNA demethylation events with particular stress on CHG context. Conclusions The combination of tissue culture-induced variation evaluated for eight experimental trials and implementation of the Taguchi method allowed the optimisation of the in vitro tissue culture conditions towards the minimum and maximum differences between a source of tissue explants (donor plant) and its regenerants from somatic embryos. The tissue culture-induced variation characteristic is mostly affected by demethylation with preferences towards CHG sequence context.

Research on Characteristics of the Photovoltaic Cells Integrated on Chip

2014 ◽  
Vol 525 ◽  
pp. 287-291
Author(s):  
Li Xian Xiao ◽  
Yong Tai He ◽  
Yue Hong Peng ◽  
Jin Hao Liu
Keyword(s):  
Conversion Efficiency ◽  
Doping Concentration ◽  
Photovoltaic Cells ◽  
Influence Factors ◽  
Device Layer ◽  
Fabrication Technology ◽  
Junction Depth ◽  
On Chip ◽  
Substrate Doping ◽  
Emitter Junction

The influence factors of Photovoltaic (PV) cells characteristics integrated on chip were analyzed based on the fabrication process and the structure of the PV cells and CMOS devices. The results show the substrate doping concentration, the emitter doping concentration, the emitter junction depth and the thickness of device layer directly determine the conversion efficiency, open voltage and the light-generated current of photovoltaic cells. In the emitter doping concentration range of 1×1019/cm3 to 1×1021/cm3 and the substrate doping concentration range of 1.0×1015/cm3 to 1.0×1017/cm3, the Photovoltaic cells have batter conversion characteristics. The PV cells were designed based on the analysis results in PC1D, and the conversion efficiency is 9.43%. The Photovoltaic cells and the CMOS devices have batter fabrication technology compatibility integrated on chip.

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

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