Non-chemically Amplified Negative Molecular Resist Materials using Polarity Change by EUV Exposure

Kohei Fujisawa; Hiroyuki Maekawa; Hiroto Kudo; Kazumasa Okamoto; Takahiro Kozawa

doi:10.2494/photopolymer.34.87

Non-chemically Amplified Negative Molecular Resist Materials using Polarity Change by EUV Exposure

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.34.87 ◽

2021 ◽

Vol 34 (1) ◽

pp. 87-93

Author(s):

Kohei Fujisawa ◽

Hiroyuki Maekawa ◽

Hiroto Kudo ◽

Kazumasa Okamoto ◽

Takahiro Kozawa

Keyword(s):

Chemically Amplified ◽

Polarity Change

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Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability

10.1117/12.656112 ◽

2006 ◽

Cited By ~ 2

Author(s):

Kyoko Kojima ◽

Takashi Hattori ◽

Hiroshi Fukuda ◽

Taku Hirayama ◽

Daiju Shiono ◽

...

Keyword(s):

Chemically Amplified ◽

Resolution Capability ◽

Negative Tone ◽

Polarity Change

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Acid-catalyzed pinacol rearrangement: chemically amplified reverse polarity change

10.1117/12.46390 ◽

1991 ◽

Cited By ~ 4

Author(s):

Ratnam Sooriyakumaran ◽

Hiroshi Ito ◽

Eugene A. Mash

Keyword(s):

Reverse Polarity ◽

Chemically Amplified ◽

Pinacol Rearrangement ◽

Acid Catalyzed ◽

Polarity Change

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Synthesis and Radical Polymerization of Pyrocarbonate Functionalized Monomers: Application to Positive-Tone Photoresists

MRS Proceedings ◽

10.1557/proc-624-199 ◽

2000 ◽

Vol 624 ◽

Author(s):

S.O. Vansteenkiste ◽

Y. Marleé ◽

E.H. Schacht ◽

M. Van Damme ◽

H. van Aert ◽

...

Keyword(s):

Radical Polymerization ◽

Positive Photoresist ◽

Chemically Amplified ◽

Thermographic Analysis ◽

Polarity Change

ABSTRACTThe synthesis of two new tert-butyl carbonic anhydride monomers, 4-vinylbenzoic and methacrylic tert-butyl carbonic anhydride was achieved successfully. Radical polymerization at 45°C yielded tert-butyl pyrocarbonate protected materials. Thermographic analysis showed that both polymers decompose cleanly at 135°C. The lithographic performance of both materials was evaluated in presence of 2,4,6-tris-(trichloromethyl)-s-triazine as photoacid generating species. It was demonstrated that the large polarity change resulted in a chemically amplified positive photoresist system

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Heating effect of the radiation chemistry of polyhydroxystyrene-type chemically amplified resists

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/aba7d7 ◽

2020 ◽

Vol 59 (8) ◽

pp. 086506

Author(s):

Yuta Ikari ◽

Kazumasa Okamoto ◽

Akihiro Konda ◽

Takahiro Kozawa ◽

Takao Tamura

Keyword(s):

Radiation Chemistry ◽

Heating Effect ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Chemically amplified resist technology for i-line applications

10.1117/12.312371 ◽

1998 ◽

Author(s):

Medhat A. Toukhy ◽

Sanjay Malik ◽

Andrew J. Blakeney ◽

Karin R. Schlicht

Keyword(s):

Chemically Amplified ◽

Chemically Amplified Resist

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The relationship between critical dimension shift and diffusion in negative chemically amplified resist systems

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585345 ◽

1991 ◽

Vol 9 (6) ◽

pp. 3380 ◽

Cited By ~ 14

Author(s):

Theodore H. Fedynyshyn

Keyword(s):

Critical Dimension ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

The Relationship ◽

And Diffusion

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Characterizing acid diffusion lengths in chemically amplified resists from measurements of deprotection kinetics

Journal of Micro/Nanolithography MEMS and MOEMS ◽

10.1117/1.jmm.13.4.043017 ◽

2014 ◽

Vol 13 (4) ◽

pp. 043017 ◽

Cited By ~ 1

Author(s):

Abhijit A. Patil ◽

Yogendra Narayan Pandey ◽

Manolis Doxastakis ◽

Gila E. Stein

Keyword(s):

Acid Diffusion ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

Journal of Materials Research ◽

10.1557/jmr.2008.0404 ◽

2008 ◽

Vol 23 (12) ◽

pp. 3269-3272 ◽

Cited By ~ 22

Author(s):

Yutaka Adachi ◽

Naoki Ohashi ◽

Tsuyoshi Ohnishi ◽

Takeshi Ohgaki ◽

Isao Sakaguchi ◽

...

Keyword(s):

Zinc Oxide ◽

Zno Films ◽

Ion Scattering ◽

Ceramic Target ◽

Interfacial Phase ◽

Sapphire Substrates ◽

Zinc Oxide Films ◽

Ion Scattering Spectroscopy ◽

Doped Zno ◽

Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

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