scholarly journals Room-temperature sensing performance of hydrogen using palladium-based film by optical setup

2020 ◽  
Vol 50 (4) ◽  
Author(s):  
_ Yiyun Yao ◽  
Alain J. Corso ◽  
Marco Bazzan ◽  
Enrico Tessarolo ◽  
Zhanshan Wang ◽  
...  

H2 sensing performance of novel Pd–Pt alloy films has been compared with those obtained by using Pd films and H2-reducted PdO films. Two different detecting systems were used to measure the hydrogenation and de-hydrogenation phases with a H2 concentration of both 5% v/v nitrogen and 1% v/v nitrogen at room temperature. The sensitivity loss observed for the Pd–Pt alloy and H2-reducted PdO samples with respect to pure Pd samples can be explained in terms of the reduction in the lattice constant and interstitial volume due to the Pt addition, which determine a decrement of hydrogen atoms penetrating in the films. On the other hand, results show an improvement in time -response for Pd–Pt alloy and H2-reducted PdO films with respect to pure Pd ones, presumably due to the increase of its permeability to H2. Moreover, the sensing measurements repeated after 60 days show that the Pd–Pt alloy films, unlike the Pd-based ones, fully preserve their performances, demonstrating the advantage of the Pt inclusion for stability purposes when the samples are stored upon humidity.

2017 ◽  
Vol 897 ◽  
pp. 630-633 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling

An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 °C is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 °C. The temperature sensitivity of the diode is 2.7 mV/°C at the forward current of 1 μA.


2019 ◽  
Vol 811 ◽  
pp. 152086 ◽  
Author(s):  
Zihui Chen ◽  
Keyang Hu ◽  
Piaoyun Yang ◽  
Xingxing Fu ◽  
Zhao Wang ◽  
...  

2008 ◽  
Vol 47-50 ◽  
pp. 1510-1513 ◽  
Author(s):  
Yasuhiro Shimizu ◽  
Keiko Sakamoto ◽  
Masaki Nakaoka ◽  
Takeo Hyodo ◽  
Makoto Egashira

H2 sensing properties of anodic TiO2 films equipped with Pd or Pd-Pt alloy electrodes has been investigated in air and in N2 atmosphere at 250°C and room temperature. The use of a Pd-Pt alloy electrode and a Pt paste improved the magnitude of H2 response, response time, stability and pretreatment- and atmosphere-dependent response properties under humid environments.


1955 ◽  
Vol 33 (11) ◽  
pp. 1684-1695 ◽  
Author(s):  
R J Cvetanović

Some aspects of the mercury photosensitized decomposition of ethylene oxide at room temperature have been reinvestigated. At least two, and probably more than two, distinct primary steps occur. The previously assumed major primary formation of hydrogen by a molecular process is shown to occur to a relatively small extent only. Hydrogen atoms play an important role in the process, as well as the following radicals: CH3, CHO, CH2CHO, and C2H5, and probably to a lesser extent also CH2. The products formed are CO, H2, C2H6, a little CH2CO and C2H4, and large amounts of aldehydes. The presence of higher aldehydes has been demonstrated. While there is a general similarity to the other modes of decomposition of ethylene oxide, a unique and unambiguous solution of the complete reaction mechanism is at present not possible.


2018 ◽  
Vol 6 (15) ◽  
pp. 6402-6413 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
Arun K. Prasad ◽  
...  

Single-step growth of V2O3 nanosheets on glass substrates has been established for room-temperature ammonia sensing.


Nanoscale ◽  
2019 ◽  
Vol 11 (17) ◽  
pp. 8554-8564 ◽  
Author(s):  
Muhammad Ikram ◽  
Lujia Liu ◽  
Yang Liu ◽  
Mohib Ullah ◽  
Laifeng Ma ◽  
...  

MoS2@MoO2 with controllable morphology fabricated via a one-step CVD method showed enhanced NO2 sensing performance at room temperature in air.


2014 ◽  
Vol 203 ◽  
pp. 223-228 ◽  
Author(s):  
N.H. Al-Hardan ◽  
Azman Jalar ◽  
M.A. Abdul Hamid ◽  
Lim Kar Keng ◽  
R. Shamsudin ◽  
...  

Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


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