Study of threshold voltage fluctuation caused by source and drain extensions doping variation of tri-gate fin-type FET using three-dimensional device simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.06je06 ◽

2014 ◽

Vol 53 (6S) ◽

pp. 06JE06 ◽

Author(s):

Toshiyuki Tsutsumi ◽

Jaeyup Lee

Keyword(s):

Threshold Voltage ◽

Three Dimensional ◽

Device Simulation ◽

Voltage Fluctuation

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Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.470.214 ◽

2011 ◽

Vol 470 ◽

pp. 214-217

Author(s):

Toshiro Hiramoto ◽

Takuya Saraya ◽

Chi Ho Lee

Keyword(s):

Bias Voltage ◽

Threshold Voltage ◽

Three Dimensional ◽

Device Simulation ◽

Fully Depleted ◽

Random Dopant Fluctuation ◽

Buried Oxide ◽

Interface Inversion ◽

The threshold voltage (Vth) variability in fully depleted SOI MOSFETs with intrinsic channel and ultrathin buried oxide under back bias voltage (Vbs) is extensively investigated by three dimensional device simulation. It is found that the Vth variability increases only slightly by applying negative Vbs by the effect of random dopant fluctuation (RDF) in the substrate, while the Vth variability is severely degraded by applying positive Vbs by the effect of the back interface inversion. As a result, there is a certain value of Vbs around 0 V where the Vth variability is minimized.

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Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0df1 ◽

2019 ◽

Vol 58 (SD) ◽

pp. SDDE06 ◽

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation

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Three-Dimensional Simulation of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Fin-Typed Field Effect Transistors

10.1063/1.2759705 ◽

2007 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Shao-Ming Yu ◽

Hsuan-Ming Huang

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Voltage Fluctuation ◽

Dimensional Simulation ◽

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Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.06gf12 ◽

2017 ◽

Vol 56 (6S1) ◽

pp. 06GF12 ◽

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation ◽

Effect Transistor

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Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hc06 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HC06 ◽

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation

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Machine Learning Based Device Simulation Using Multi-variable Non-linear Regression to Assess the Impact of Device Parameter Variability on Threshold Voltage of Double Gate-All-Around (DGAA) MOSFET

2020 IEEE 2nd International Conference on Circuits and Systems (ICCS) ◽

10.1109/iccs51219.2020.9336608 ◽

2020 ◽

Author(s):

Sandeep Moparthi ◽

Chandan Yadav ◽

Gopi Krishna Saramekala ◽

Pramod Kumar Tiwari

Keyword(s):

Machine Learning ◽

Linear Regression ◽

Threshold Voltage ◽

Device Simulation ◽

Double Gate ◽

Device Parameter ◽

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Back gate engineering for suppression of threshold voltage fluctuation in fully-depleted SOI MOSFETs

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) ◽

10.1109/soi.2000.892778 ◽

2002 ◽

Author(s):

T. Numata ◽

M. Noguchi ◽

Y. Oowaki ◽

S. Takagi

Keyword(s):

Threshold Voltage ◽

Voltage Fluctuation ◽

Back Gate ◽

Fully Depleted ◽

Gate Engineering

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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282848 ◽

2006 ◽

Author(s):

R. Tanabe ◽

Y. Ashizawa ◽

H. Oka

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Sram Cell ◽

Random Dopant Fluctuations ◽

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Three-dimensional device simulation of random telegraph noise spectroscopy with Coulomb energy variation of the trap in high-k gate oxide

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.124301 ◽

2018 ◽

Vol 57 (12) ◽

pp. 124301

Author(s):

Po-Jui Lin ◽

Chong-Zih Su ◽

Chih-Wei Yao ◽

Hiroshi Watanabe

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Coulomb Energy ◽

Random Telegraph Noise ◽

Energy Variation ◽

Noise Spectroscopy ◽

High K ◽

Telegraph Noise

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Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.333844 ◽

1994 ◽

Vol 41 (11) ◽

pp. 2216-2221 ◽

Author(s):

T. Mizuno ◽

J. Okumtura ◽

A. Toriumi

Keyword(s):

Experimental Study ◽

Threshold Voltage ◽

Voltage Fluctuation ◽

Statistical Variation

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