Электролюминесценция слоев Ta-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-, полученных методом молекулярного наслаивания

The work shows the possibility of using electroluminescence to study the structures of Si-Ta2O5 and Si-SiO2-Ta2O5 and to obtain the information about the electronic structure of the Ta2O5 layer and the properties of the SiO2-Ta2O5 boundary. A model of the electronic structure of the Ta2O5 layer obtained by molecular layering (atomic layer deposition) is proposed to explain the type of spectral distribution of luminescence regardless of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation of the near-surface region of SiO2 and quenching of the luminescence band in the spectral region of 650 nm.

Двухрешетчатые магнитоплазмонные структуры на основе BIG и перфорированных пленок золота

A method for the synthesis of magnetoplasmonic crystals containing two Ag gratings with the structure (Au / BIG) 2, in which the plasmon lattices of gold are displaced relative to each other by half the period, is presented. Gold films with a thickness of about 40 nm are formed by the method of ion-beam sputtering – deposition, and the adhesive properties of the film make it possible to carry out dimensional etching with a sharply focused ion beam. It was shown that the synthesis of the second plasmon lattice located above the garnet layer of 100 nm thick, preserves the periodicity of the first Au lattice, however a significant influence of the diffusion processes on the lower Au lattice is observed, which leads to a decrease in its density. The dependence of the transmission magneto-optical effect on the thickness of the upper lattice and the presence of an encapsulating Ta2O5 layer is investigated

A MODEL BASED METHOD FOR COMPARING THE PROPERTIES OF SOME METAL-Ta2O5/SiO2-Si STRUCTURES

Oxygen annealed radio frequency (RF) reactively sputtered and thermally grown (thermal) Ta2O5 films on sili-con were comparatively studied by using combination of C-V and I-V measurements and the previously developed comprehensive model for the metal-Ta2O5/SiO2-Si structures. Dielectric properties of separate layers were extracted by comparing the experimental and the theoretical results. It is found that the net leakage properties of the Ta2O5 layer are significantly better in the case of RF than thermal, particularly in the case of the Au gate. Excessive growth of the SiO2 layer of about 0.3 nm in the case of RF films leads to an unwanted increase of the equivalent oxide thickness. Appropriate interface engineering is required in order to prevent the SiO2 excessive growth during the oxygen anneal-ing. Such a growth can reduce the beneficial effects of the annealing on the net properties of Ta2O5 films obtained by RF.