A CMOS Low-Power Digital Variable Gain Amplifier Design for a Cognitive Radio Receiver “Application for IEEE 802.22 Standard”

2018 ◽  
Vol 27 (09) ◽  
pp. 1850135 ◽  
Author(s):  
Sawssen Lahiani ◽  
Samir Ben Salem ◽  
Houda Daoud ◽  
Mourad Loulou

This paper presents the design of a new Digital Variable Gain Amplifier cell (DVGA). The proposed circuit based on transconductance, gm, amplifier and a transconductance amplifier is analyzed and designed for a cognitive radio receiver. The variable-gain amplifier (VGA) proposed consists of a digital control block, an auxiliary pair to retain a constant current density, and offers a gain-independent bandwidth (BW). A novel cell structure is designed for high gain, high BW, low power consumption and low Noise Figure (NF). The Heuristic Method is used to optimize the proposed circuit performance for high gain, low noise and low power consumption. This circuit is implemented and simulated using device-level description of TSMC 0.18[Formula: see text][Formula: see text]m CMOS process. Simulation results show that the DVGA can provide a gain variation range of 54[Formula: see text]dB (from 54[Formula: see text]dB to 0[Formula: see text]dB) with a 3[Formula: see text]dB BW over more than 110[Formula: see text]MHz. The circuit consumes the maximum power of 0.65[Formula: see text]mW from a 1.8[Formula: see text]V supply.

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.


Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21610-21616
Author(s):  
Dingwei Li ◽  
Momo Zhao ◽  
Kun Liang ◽  
Huihui Ren ◽  
Quantan Wu ◽  
...  

Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.


1991 ◽  
Vol 69 (3-4) ◽  
pp. 177-179
Author(s):  
Langis Roy ◽  
Malcolm G. Stubbs ◽  
James S. Wight

The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.


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